d a t a sh eet product speci?cation supersedes data of september 1994 file under discrete semiconductors, sc04 1997 may 30 discrete semiconductors 2N2907; 2N2907a pnp switching transistors m3d125
1997 may 30 2 philips semiconductors product speci?cation pnp switching transistors 2N2907; 2N2907a features high current (max. 600 ma) low voltage (max. 60 v). applications switching and linear amplification. description pnp switching transistor in a to-18 metal package. npn complements: 2n2222 and 2n2222a. pinning pin description 1 emitter 2 base 3 collector, connected to case fig.1 simplified outline (to-18) and symbol. handbook, halfpage mam263 1 3 2 3 1 2 quick reference data symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 60 v v ceo collector-emitter voltage open base 2N2907 -- 40 v 2N2907a -- 60 v i c collector current (dc) -- 600 ma p tot total power dissipation t amb 25 c - 400 mw h fe dc current gain i c = - 150 ma; v ce = - 10 v 100 300 f t transition frequency i c = - 50 ma; v ce = - 20 v; f = 100 mhz 200 - mhz t off turn-off time i con = - 150 ma; i bon = - 15 ma; i boff =15ma - 300 ns
1997 may 30 3 philips semiconductors product speci?cation pnp switching transistors 2N2907; 2N2907a limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 60 v v ceo collector-emitter voltage open base; i c <- 100 ma 2N2907 -- 40 v 2N2907a -- 60 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 600 ma i cm peak collector current -- 800 ma i bm peak base current -- 200 ma p tot total power dissipation t amb 25 c - 400 mw t case 25 c - 1.2 w t stg storage temperature - 65 +150 c t j junction temperature - 200 c t amb operating ambient temperature - 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air 438 k/w r th j-c thermal resistance from junction to case 146 k/w
1997 may 30 4 philips semiconductors product speci?cation pnp switching transistors 2N2907; 2N2907a characteristics t amb =25 c unless otherwise speci?ed. note 1. pulse test: t p 300 m s; d 0.02. symbol parameter conditions min. max. unit i cbo collector cut-off current 2N2907 i e = 0; v cb = - 50 v -- 20 na i e = 0; v cb = - 50 v; t amb = 150 c -- 20 m a i cbo collector cut-off current 2N2907a i e = 0; v cb = - 50 v -- 10 na i e = 0; v cb = - 50 v; t amb = 150 c -- 10 m a i ebo emitter cut-off current i c = 0; v eb = - 5v -- 50 na h fe dc current gain v ce = - 10 v 2N2907 i c = - 0.1 ma 35 - i c = - 1ma 50 - i c = - 10 ma 75 - i c = - 150 ma; note 1 100 300 i c = - 500 ma; note 1 30 h fe dc current gain v ce = - 10 v 2N2907a i c = - 0.1 ma 75 - i c = - 1 ma 100 - i c = - 10 ma 100 - i c = - 150 ma; note 1 100 300 i c = - 500 ma; note 1 50 - v cesat collector-emitter saturation voltage i c = - 150 ma; i b = - 15 ma; note 1 - 400 mv i c = - 500 ma; i b = - 50 ma; note 1 - 1.6 v v besat base-emitter saturation voltage i c = - 150 ma; i b = - 15 ma; note 1 - 1.3 v i c = - 500 ma; i b = - 50 ma; note 1 - 2.6 v c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz - 8pf c e emitter capacitance i c =i c = 0; v eb = - 2 v; f = 1 mhz - 30 pf f t transition frequency i c = - 50 ma; v ce = - 20 v; f = 100 mhz; note 1 200 - mhz switching times (between 10% and 90% levels); see fig.2 t on turn-on time i con = - 150 ma; i bon = - 15 ma; i boff =15ma - 45 ns t d delay time - 15 ns t r rise time - 35 ns t off turn-off time - 300 ns t s storage time - 250 ns t f fall time - 50 ns
1997 may 30 5 philips semiconductors product speci?cation pnp switching transistors 2N2907; 2N2907a fig.2 test circuit for switching times. handbook, full pagewidth r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc v i = - 9.5 v; t = 500 m s; t p =10 m s; t r =t f 3 ns. r1 = 68 w ; r2 = 325 w ; r b = 325 w ; r c = 160 w . v bb = 3.5 v; v cc = - 29.5 v. oscilloscope input impedance z i =50 w .
1997 may 30 6 philips semiconductors product speci?cation pnp switching transistors 2N2907; 2N2907a package outline references outline version european projection issue date iec jedec eiaj sot18/13 to-18 b11/c7 type 3 97-04-18 a a k d a l seating plane b d 1 0 5 10 mm scale metal-can cylindrical single-ended package; 3 leads sot18/13 w a m m b m a 1 2 3 j b dimensions (millimetre dimensions are derived from the original inch dimensions) unit w mm 5.31 4.74 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 a 0.40 45 aabdd 1 jkl 2.54
1997 may 30 7 philips semiconductors product speci?cation pnp switching transistors 2N2907; 2N2907a definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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